Here is the English information on the NCP3065DR2G chip:
- Breakdown Voltage: 30V
- On-Resistance: 2.0 Ω (max)
- Continuous Drain Current: 3A
- Fast Switching Speeds
- SOT-223 (SC-70) Small Outline Transistor Package
The NCP3065DR2G is an N-channel power MOSFET from ON Semiconductor.
Key Features:
- Designed for efficient switching of currents up to 3A
- Low on-resistance enables high conduction with minimal losses
- Fast switching improves conversion efficiency at high frequencies
- Compact SOT-223 package saves space for board-level designs
Common Applications:
- DC/DC converters, voltage regulators
- Battery chargers/protection circuits below 3A loads
- Low power consumer electronics
Benefits include the ability to efficiently switch up to 3A of current in a small, surface mount package well-suited for space-constrained power designs.
Its attributes make it suitable for various power supply and management applications requiring up to 3A switches.
In summary, the NCP3065DR2G provides a versatile 3A switching solution in a compact footprint.
