Here is the English information on the NCV8560MN330R2G chip:
- Breakdown Voltage: 30V
- On-Resistance: 3.3 mΩ (typ)
- Continuous Drain Current: 6A
- Fast Switching Speeds
- DFN SON 6 (3x3) Package
The NCV8560MN330R2G is an N-channel power MOSFET from ON Semiconductor.
Key Features:
- Designed for efficient switching of currents up to 6A
- Very low on-resistance minimizes conduction losses
- Fast switching improves efficiency at high operating frequencies
- Ultra-small DFN SON package saves board space
Common Applications:
- Point-of-load DC/DC converters below 6A load
- Battery chargers/protection circuits for loads under 6A
- Portable/mobile electronic power supplies
Benefits include the ability to switch 6A efficiently in an extremely compact package. It is well-suited for integration into space-constrained power designs.
In summary, the NCV8560MN330R2G combines 6A current handling with ultra-low resistance in an minimized footprint MOSFET package.
